参数项参数值
参数项参数值
Forward Transconductance - Min2.1 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current3 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2.5 V
Rds On - Drain-Source Resistance85 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time30 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time8 ns
RoHS Details
CNHTS8541210000
Qg - Gate Charge5 nC
DescriptionMOSFET 60V N-CHANNEL 3A
Package / CaseSC-96-3
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time10 ns
BrandROHM Semiconductor
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor RSR030N06HZGTL
SubcategoryMOSFETs
Unit Weight0.020919 oz
Product CategoryMOSFET
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time12 ns
Moisture Sensitivity Level1 (Unlimited)