BSC059N04LSGATMA1

厂牌:Infineon Technologies
包装:REEL 1
类目:元器件 > 分立器件 > MOSFET
编号:B000052331726
描述:Trans MOSFET N-CH 40V 16A 8-Pin TDSON EP T/R
最新价格近期成交9单+
数量价格(含税)
5¥9.5982
10¥6.0379
100¥4.1400
500¥3.3699
1000¥3.0053
2500¥2.7680
库存:4,792交期:3-4 weeks起订:5000增量:1
数量:
X
2.7680(单价)
合计:
¥13840.00
商品满500包邮
商品参数
参数项参数值
参数项参数值
Minimum Operating Temperature- 55 C
ConfigurationSingle
DescriptionMOSFET N-Ch 40V 73A TDSON-8 OptiMOS 3
JPHTS8541290100
Forward Transconductance - Min48 S
CAHTS8541290000
KRHTS8541299000
Transistor PolarityN-Channel
Id - Continuous Drain Current73 A
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
ImageInfineon Technologies BSC059N04LSGATMA1
Rds On - Drain-Source Resistance4.9 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time23 ns
PackagingReel
PackagingMouseReel
PackagingCut Tape
Vgs - Gate-Source Voltage- 20 V, + 20 V
Package / CaseTDSON-8
Height1.27 mm
Length5.9 mm
Typical Turn-On Delay Time5.6 ns
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
Width5.15 mm
Factory Pack Quantity5000
Mounting StyleSMD/SMT
Product TypeMOSFET
BrandInfineon Technologies
MXHTS85412999
ManufacturerInfineon
TARIC8541290000
SeriesOptiMOS 3
Qg - Gate Charge40 nC
RoHS Details
CNHTS8541290000
TradenameOptiMOS
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time3.8 ns
Unit Weight0.005256 oz
Part # AliasesBSC059N04LS G SP000391499
Pd - Power Dissipation50 W
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time3.4 ns
Moisture Sensitivity Level1 (Unlimited)