参数项参数值
参数项参数值
ConfigurationSingle
KRHTS8541219000
JPHTS8541210101
CAHTS8541210000
Forward Transconductance - Min100 mS
ImageDiodes Incorporated BSS138-7-F
DescriptionMOSFET 300mW 50V DSS
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current200 mA
Vgs - Gate-Source Voltage- 20 V, + 20 V
Minimum Operating Temperature- 55 C
ProductMOSFET Small Signal
Height1 mm
Length2.9 mm
PackagingCut Tape
PackagingMouseReel
PackagingReel
Rds On - Drain-Source Resistance3.5 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
Package / CaseSOT-23-3
Product CategoryMOSFET
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
Width1.3 mm
Mounting StyleSMD/SMT
Product TypeMOSFET
BrandDiodes Incorporated
MXHTS85412101
RoHS Details
ManufacturerDiodes Incorporated
TARIC8541210000
SeriesBSS138
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541210095
Unit Weight0.000988 oz
CNHTS8541210000
Pd - Power Dissipation300 mW
Vds - Drain-Source Breakdown Voltage50 V
Number of Channels1 Channel