参数项参数值
参数项参数值
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO75 V
Maximum DC Collector Current1100 mA
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current600 mA
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage1 V
Emitter- Base Voltage VEBO6 V
DC Collector/Base Gain hfe Min40
QualificationAEC-Q101
Length2.9 mm
Width1.3 mm
Height0.94 mm
MXHTS85412101
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageON Semiconductor SMMBT2222ALT1G
KRHTS8541219000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Package / CaseSOT-23-3
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
TARIC8541210000
Unit Weight0.001376 oz
SeriesMMBT2222AL
Pd - Power Dissipation300 mW
DescriptionBipolar Transistors - BJT SS GP XSTR SPCL TR
BrandON Semiconductor
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
USHTS8541210075
Moisture Sensitivity Level1 (Unlimited)