参数项参数值
参数项参数值
DC Current Gain hFE Max200 at 1 A, 5 VDC
Collector- Base Voltage VCBO100 V
ConfigurationSingle
Maximum DC Collector Current10 A
Collector- Emitter Voltage VCEO Max70 V
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO10 V
Collector-Emitter Saturation Voltage600 mV
DC Collector/Base Gain hfe Min50 at 1 A, 5 VDC
Mounting StyleThrough Hole
CNHTS8541210000
MXHTS85412101
BrandMicrochip / Microsemi
KRHTS8541219000
JPHTS8541210101
Package / CaseTO-5-3
CAHTS8541210000
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 200 C
Factory Pack Quantity100
ManufacturerMicrochip
PackagingBulk
TARIC8541210000
RoHSN
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT Power BJT
ImageMicrochip / Microsemi JANTX2N4150
SubcategoryTransistors
Product TypeBJTs - Bipolar Transistors
Unit Weight0.242420 oz
Pd - Power Dissipation1 W
USHTS8541210095