参数项参数值
参数项参数值
Forward Transconductance - Min10 s
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current13 A
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage- 2.5 V
Rds On - Drain-Source Resistance200 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time70 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time20 ns
RoHS Details
CNHTS8541290000
Qg - Gate Charge40 nC
ImageROHM Semiconductor RD3P130SPFRATL
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingReel
PackagingMouseReel
PackagingCut Tape
BrandROHM Semiconductor
TARIC8541290000
Factory Pack Quantity2500
Product CategoryMOSFET
SubcategoryMOSFETs
Unit Weight0.016315 oz
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation20 W
USHTS8541290095
DescriptionMOSFET Pch -100V Vdss -13A TO-252(DPAK); TO-252
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time25 ns
Moisture Sensitivity Level1 (Unlimited)