参数项参数值
参数项参数值
Forward Transconductance - Min1.5 S
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current1.5 A
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage- 2.5 V
Rds On - Drain-Source Resistance470 mOhms
Transistor Type1 P-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time10 ns
RoHS Details
CNHTS8541290000
Qg - Gate Charge17 nC
ImageROHM Semiconductor RSQ015P10HZGTR
Package / CaseSC-95-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time10 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
TARIC8541290000
Factory Pack Quantity3000
Product CategoryMOSFET
SubcategoryMOSFETs
Unit Weight0.001641 oz
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1.25 W
USHTS8541290095
DescriptionMOSFET -100V P-CHANNEL -1.5A
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time15 ns