SI2325DS-T1-GE3

SI2325DS-T1-GE3

厂牌：Vishay

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000052350252

描述：MOSFET P-CH D-S 150V SOT-23

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商品参数

参数项参数值

参数项参数值

JPHTS8541210101

ConfigurationSingle

Forward Transconductance - Min2.2 S

CAHTS8541210000

Transistor PolarityP-Channel

Id - Continuous Drain Current0.53 A

Vgs th - Gate-Source Threshold Voltage- 4.5 V

TechnologySi

KRHTS8541299000

Rds On - Drain-Source Resistance1.2 Ohms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time16 ns

Vgs - Gate-Source Voltage- 20 V, + 20 V

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

Length2.9 mm

Package / CaseSOT-23-3

Height1.45 mm

TARIC8541290000

Typical Turn-On Delay Time7 ns

ManufacturerVishay

DescriptionMOSFET -150V Vds 20V Vgs SOT-23

PackagingCut Tape

PackagingMouseReel

PackagingReel

ImageVishay Semiconductors SI2325DS-T1-GE3

RoHS Details

Product CategoryMOSFET

Width1.6 mm

Mounting StyleSMD/SMT

BrandVishay Semiconductors

Factory Pack Quantity3000

CNHTS8541210000

MXHTS85412101

Qg - Gate Charge7.7 nC

Product TypeMOSFET

SeriesSI2

TradenameTrenchFET

SubcategoryMOSFETs

USHTS8541290095

Channel ModeEnhancement

Fall Time11 ns

Unit Weight0.000282 oz

Part # AliasesSI2325DS-GE3

Pd - Power Dissipation0.75 W

Vds - Drain-Source Breakdown Voltage150 V

Number of Channels1 Channel

Rise Time11 ns