在线商城 
FMMT413TD
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > 双极晶体管
编号：B000052352011
描述：Trans GP BJT NPN 50V 0.1A 500mW Automotive 3-Pin SOT-23 T/R
商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max50 at 10 mA, 10 V
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO150 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current0.1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Width1.4 mm
Collector-Emitter Saturation Voltage150 mV
Height1 mm
DC Collector/Base Gain hfe Min50 at 10 mA, 10 V
MXHTS85412999
Length3.05 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Maximum Operating Temperature+ 150 C
CNHTS8541210000
ImageDiodes Incorporated FMMT413TD
TARIC8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
RoHS Details
SeriesFMMT41
Factory Pack Quantity500
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
BrandDiodes Incorporated
Unit Weight0.000282 oz
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
DescriptionBipolar Transistors - BJT NPN Avalanche
USHTS8541290095
Pd - Power Dissipation330 mW