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DMN2400UFB-7
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000052352025
描述：场效应管(MOSFET) 470mW 20V 750mA 1个N沟道
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Id - Continuous Drain Current750 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time4.11 ns
Rds On - Drain-Source Resistance550 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time14.8 ns
MXHTS85412101
Qg - Gate Charge500 pC
KRHTS8541219000
Package / CaseX1-DFN1006-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
Channel ModeEnhancement
Fall Time9.6 ns
CNHTS8541210000
PackagingMouseReel
PackagingCut Tape
PackagingReel
Unit Weight0.000035 oz
ImageDiodes Incorporated DMN2400UFB-7
TARIC8541210000
Pd - Power Dissipation470 uW
RoHS Details
Factory Pack Quantity3000
SeriesDMN24
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Product CategoryMOSFET
Vds - Drain-Source Breakdown Voltage20 V
Product TypeMOSFET
Number of Channels1 Channel
DescriptionMOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 3K
SubcategoryMOSFETs
Rise Time3.82 ns
USHTS8541210095