参数项参数值
参数项参数值
Gain Bandwidth Product fT130 MHz
Collector- Base Voltage VCBO160 V
Maximum DC Collector Current2.5 A
Collector- Emitter Voltage VCEO Max140 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO7 V
Width1.3 mm
Height1 mm
MXHTS85412999
Length2.9 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
ImageDiodes Incorporated ZXTP23140BFHTA
RoHS Details
SeriesZXTP23140
SubcategoryTransistors
BrandDiodes Incorporated
Factory Pack Quantity3000
Unit Weight0.000282 oz
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT PNP Medium Power
ManufacturerDiodes Incorporated
USHTS8541290095
Pd - Power Dissipation1810 mW