参数项参数值
参数项参数值
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO6 V
MXHTS85412101
DC Collector/Base Gain hfe Min80
KRHTS8541219000
CNHTS8541210000
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
JPHTS8541210101
CAHTS8541210000
TARIC8541210000
PackagingMouseReel
PackagingReel
PackagingCut Tape
BrandToshiba
SeriesRN4987
RoHS Details
ImageToshiba RN4987,LF(CT
Product CategoryBipolar Transistors - Pre-Biased
Unit Weight0.000212 oz
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerToshiba
Product TypeBJTs - Bipolar Transistors - Pre-Biased
Pd - Power Dissipation200 mW
USHTS8541210075
DescriptionBipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
Typical Resistor Ratio0.213
Typical Input Resistor10 kOhms
Number of Channels2 Channel