参数项参数值
参数项参数值
Gain Bandwidth Product fT14 MHz
ConfigurationSingle
Collector- Base Voltage VCBO700 V
Maximum DC Collector Current8 A
Collector- Emitter Voltage VCEO Max400 V
Continuous Collector Current8 A
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO9 V
Height15.75 mm
MXHTS85412999
KRHTS8541299000
Collector-Emitter Saturation Voltage1 V
DC Collector/Base Gain hfe Min8
Length10.53 mm
Factory Pack Quantity50
Width4.83 mm
PackagingTube
JPHTS8541290100
Minimum Operating Temperature- 65 C
CNHTS8541210000
Package / CaseTO-220-3
CAHTS8541290000
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
ImageON Semiconductor MJE13007G
BrandON Semiconductor
Product CategoryBipolar Transistors - BJT
RoHS Details
TARIC8541290000
DescriptionBipolar Transistors - BJT 8A 400V 80W NPN
SeriesMJE13007
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
SubcategoryTransistors
USHTS8541290095
Unit Weight0.211644 oz
Pd - Power Dissipation80 W
Moisture Sensitivity LevelNot Applicable