参数项参数值
参数项参数值
Forward Transconductance - Min18 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Id - Continuous Drain Current6 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time17 ns
MXHTS85412999
CNHTS8541290000
Rds On - Drain-Source Resistance35 mOhms
Transistor Type1 P-Channel
KRHTS8541299000
Typical Turn-Off Delay Time94 ns
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseTSOT-26-6
PackagingReel
PackagingCut Tape
PackagingMouseReel
Qg - Gate Charge23.1 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
RoHS Details
SubcategoryMOSFETs
Factory Pack Quantity3000
ImageDiodes Incorporated DMP2035UVT-7
SeriesDMP2035
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET P-Ch -20V ENH Mode 35mOhm -4.5V -6.0A
Channel ModeEnhancement
Fall Time42 ns
USHTS8541290095
Unit Weight0.000459 oz
Pd - Power Dissipation1.2 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time12 ns