参数项参数值
参数项参数值
Forward Transconductance - Min14 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current6.04 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
KRHTS8541219000
Typical Turn-On Delay Time16.8 ns
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
JPHTS8541210101
RoHS Details
ProductMOSFET Small Signal
CAHTS8541210000
Rds On - Drain-Source Resistance23 mOhms
Transistor Type2 P-Channel
Typical Turn-Off Delay Time94.1 ns
Factory Pack Quantity2500
Package / CaseTSSOP-8
BrandDiodes Incorporated
TARIC8541210000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
PackagingMouseReel
PackagingCut Tape
PackagingReel
ImageDiodes Incorporated DMP2035UTS-13
SubcategoryMOSFETs
Qg - Gate Charge23.1 nC
Product CategoryMOSFET
DescriptionMOSFET MOSFET P-CHAN
Product TypeMOSFET
MXHTS85412101
SeriesDMP2035
USHTS8541210095
Channel ModeEnhancement
Unit Weight0.005573 oz
Fall Time42.4 ns
CNHTS8541210000
Pd - Power Dissipation890 mW
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time12.4 ns