参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current6.6 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
CNHTS8541210000
Typical Turn-On Delay Time16.8 ns
MXHTS85412999
Rds On - Drain-Source Resistance19 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time94.1 ns
KRHTS8541299000
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Mounting StyleSMD/SMT
Package / CaseX1-DFN1616-6
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingCut Tape
PackagingReel
Qg - Gate Charge29 nC
BrandDiodes Incorporated
TARIC8541290000
ManufacturerDiodes Incorporated
Factory Pack Quantity3000
ImageDiodes Incorporated DMP2035UFCL-7
Product CategoryMOSFET
RoHS Details
SeriesDMP2035
DescriptionMOSFET 20V P-Ch Enh FET 8Vgss -20Vdss -40A
Product TypeMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time42.4 ns
USHTS8541290095
Unit Weight0.000035 oz
Pd - Power Dissipation740 mW
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time12.4 ns