SI2312BDS-T1-E3

SI2312BDS-T1-E3

厂牌：VISHAY

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000052355722

描述：Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R

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商品参数

参数项参数值

参数项参数值

KRHTS8541299000

ConfigurationSingle

Forward Transconductance - Min30 S

Transistor PolarityN-Channel

Minimum Operating Temperature- 55 C

Id - Continuous Drain Current5 A

TechnologySi

Vgs th - Gate-Source Threshold Voltage450 mV

Length2.9 mm

Rds On - Drain-Source Resistance31 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time35 ns

Vgs - Gate-Source Voltage- 8 V, + 8 V

Height1.45 mm

RoHS Details

JPHTS8541210101

Product CategoryMOSFET

Package / CaseSOT-23-3

ManufacturerVishay

DescriptionMOSFET N-Channel 20V 3.9A

Typical Turn-On Delay Time9 ns

MXHTS85412101

ImageVishay Semiconductors SI2312BDS-T1-E3

CAHTS8541210000

Factory Pack Quantity3000

Maximum Operating Temperature+ 150 C

Width1.6 mm

PackagingReel

PackagingCut Tape

PackagingMouseReel

TARIC8541290000

BrandVishay Semiconductors

Mounting StyleSMD/SMT

SubcategoryMOSFETs

Qg - Gate Charge12 nC

Product TypeMOSFET

TradenameTrenchFET

SeriesSI2

Channel ModeEnhancement

USHTS8541290095

Unit Weight0.000282 oz

Fall Time10 ns

CNHTS8541290000

Part # AliasesSI2312BDS-E3

Pd - Power Dissipation1.25 W

Vds - Drain-Source Breakdown Voltage20 V

Number of Channels1 Channel

Rise Time30 ns

Moisture Sensitivity Level1 (Unlimited)