参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT140 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.15 A
Collector- Emitter Voltage VCEO Max- 50 V
Continuous Collector Current- 150 mA
TechnologySi
ConfigurationDual
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
MXHTS85412999
Width1.25 mm
DC Collector/Base Gain hfe Min120
Height0.9 mm
CNHTS8541290000
Length2 mm
KRHTS8541299000
BrandROHM Semiconductor
USHTS8541290095
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
TARIC8541290000
RoHS Details
PackagingCut Tape
PackagingReel
PackagingMouseReel
SeriesUMT2N
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Pd - Power Dissipation150 mW
DescriptionBipolar Transistors - BJT DUAL PNP 50V 150MA SOT-363
Part # AliasesUMT2N