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SIS412DN-T1-GE3
厂牌：Vishay
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000052358579
描述：MOSFET N-CH D-S 30V 1212-8 PPAK ;;;
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min17 S
Transistor PolarityN-Channel
Id - Continuous Drain Current12 A
Minimum Operating Temperature- 55 C
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Rds On - Drain-Source Resistance24 mOhms
Transistor Type1 N-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Product CategoryMOSFET
JPHTS8541290100
Package / CasePowerPAK-1212-8
RoHS Details
DescriptionMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
Typical Turn-On Delay Time5 ns, 15 ns
MXHTS85423901
ImageVishay Semiconductors SIS412DN-T1-GE3
CAHTS8541290000
Factory Pack Quantity3000
Maximum Operating Temperature+ 150 C
TARIC8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
ManufacturerVishay
BrandVishay Semiconductors
SubcategoryMOSFETs
Mounting StyleSMD/SMT
Qg - Gate Charge8 nC
Product TypeMOSFET
TradenameTrenchFET, PowerPAK
SeriesSIS
Channel ModeEnhancement
USHTS8542390001
Unit Weight0.006522 oz
Fall Time10 ns
CNHTS8541290000
Part # AliasesSIS412DN-GE3
Pd - Power Dissipation10 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time10 ns, 12 ns
Moisture Sensitivity Level1 (Unlimited)