参数项参数值
参数项参数值
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current5.3 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage5 V
Rds On - Drain-Source Resistance1.5 Ohms
Typical Turn-Off Delay Time14 ns
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time12 ns
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge10 nC
TARIC8541290000
ManufacturerVishay
Package / CaseTO-220FP-3
JPHTS8541290100
Channel ModeEnhancement
CNHTS8541290000
Mounting StyleThrough Hole
CAHTS8541290000
PackagingTube
Fall Time11 ns
ImageVishay / Siliconix SIHF5N50D-E3
Unit Weight0.211644 oz
SeriesD
BrandVishay / Siliconix
Pd - Power Dissipation28.8 W
Factory Pack Quantity50
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET 500V Vds 30V Vgs TO-220 FULLPAK
Vds - Drain-Source Breakdown Voltage500 V
USHTS8541290095
Number of Channels1 Channel
Rise Time11 ns