参数项参数值
参数项参数值
ConfigurationDual
If - Forward Current215 mA
Maximum Diode Capacitance1.5 pF
MXHTS85411001
Ir - Reverse Current2.5 uA
Width1.3 mm
KRHTS8541109000
Max Surge Current500 mA
Height0.94 mm
Length2.9 mm
Termination StyleSMD/SMT
CNHTS8504409191
ProductSwitching Diodes
CAHTS8541100090
Mounting StyleSMD/SMT
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageON Semiconductor BAV99LT3G
Recovery Time6 ns
Peak Reverse Voltage70 V
TARIC8541100000
RoHS Details
Factory Pack Quantity10000
SeriesBAV99L
BrandON Semiconductor
Unit Weight0.000282 oz
ManufacturerON Semiconductor
DescriptionDiodes - General Purpose, Power, Switching 70V 215mA Dual
Pd - Power Dissipation300 mW
SubcategoryDiodes & Rectifiers
TypeSwitching Diode
USHTS8541100070
Vf - Forward Voltage1.25 V
Moisture Sensitivity Level1 (Unlimited)