参数项参数值
参数项参数值
DC Current Gain hFE Max200 at 2 mA, 5 V
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max45 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
DC Collector/Base Gain hfe Min200
Width1.3 mm
Height0.95 mm
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.001023 oz
TARIC8541290000
RoHS Details
Pd - Power Dissipation350 mW
Part # AliasesBC847B
ImageROHM Semiconductor BC847BT116
SeriesBC847B
BrandROHM Semiconductor
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerROHM Semiconductor
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN 45V 1MA
Moisture Sensitivity Level1 (Unlimited)