参数项参数值
参数项参数值
DC Current Gain hFE Max800
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current0.1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.5 V
DC Collector/Base Gain hfe Min420
KRHTS8541109000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541100901
CAHTS8541100090
CNHTS8541210000
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541100000
Unit Weight0.000282 oz
RoHS Details
SeriesBC847
Pd - Power Dissipation200 mW
BrandComchip Technology
ImageComchip Technology BC847B-G
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerComchip Technology
Product CategoryBipolar Transistors - BJT
USHTS8541100080
DescriptionBipolar Transistors - BJT SM SIGNAL TRANSISTOR