参数项参数值
参数项参数值
DC Current Gain hFE Max800
Gain Bandwidth Product fT250 MHz
ConfigurationSingle
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current100 mA
TechnologySi
Minimum Operating Temperature- 65 C
Transistor PolarityNPN
KRHTS8541219000
Emitter- Base Voltage VEBO6 V
JPHTS8541290100
CAHTS8541290000
ImageInfineon Technologies BC847CE6433HTMA1
Product CategoryBipolar Transistors - BJT
Collector-Emitter Saturation Voltage200 mV
Maximum Operating Temperature+ 150 C
Package / CaseSOT-23-3
DescriptionBipolar Transistors - BJT NPN Silicon AF TRANSISTOR
DC Collector/Base Gain hfe Min420
PackagingReel
PackagingMouseReel
PackagingCut Tape
Mounting StyleSMD/SMT
RoHS Details
TARIC8541290000
BrandInfineon Technologies
Factory Pack Quantity10000
ManufacturerInfineon
MXHTS85412999
SeriesBC847
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
USHTS8541210075
Unit Weight0.000282 oz
CNHTS8541290000
Part # AliasesBC 847C E6433 SP000010590
Pd - Power Dissipation330 mW
Moisture Sensitivity Level1 (Unlimited)