参数项参数值
参数项参数值
DC Current Gain hFE Max450
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current100 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage200 mV
DC Collector/Base Gain hfe Min200
Height0.9 mm
Width1.25 mm
Length2 mm
MXHTS85412999
KRHTS8541219000
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 60 C
CAHTS8541290000
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.000265 oz
Pd - Power Dissipation250 mW
SeriesBC847
BrandInfineon Technologies
Part # AliasesBC 847PN H6327 SP000747288
ImageInfineon Technologies BC847PNH6327XTSA1
ManufacturerInfineon
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
USHTS8541210075