参数项参数值
参数项参数值
DC Current Gain hFE Max475
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current0.1 A
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO6 V, - 5 V
Collector-Emitter Saturation Voltage0.6 V, - 0.65 V
DC Collector/Base Gain hfe Min200
Width1.25 mm
Height0.9 mm
Length2 mm
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.000265 oz
RoHS Details
Pd - Power Dissipation380 mW
SeriesBC847BP
ImageON Semiconductor BC847BPDW1T2G
BrandON Semiconductor
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerON Semiconductor
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT 45V 100mA DUAL
Moisture Sensitivity Level1 (Unlimited)