参数项参数值
参数项参数值
DC Current Gain hFE Max800 at 2 mA, 5 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage250 mV
DC Collector/Base Gain hfe Min420 at 2 mA, 5 V
KRHTS8541109000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541100901
Minimum Operating Temperature- 55 C
CAHTS8541100090
CNHTS8541409000
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541100000
Unit Weight0.000176 oz
RoHS Details
SeriesBC847
Pd - Power Dissipation150 mW
BrandComchip Technology
ImageComchip Technology BC847CW-G
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerComchip Technology
Product CategoryBipolar Transistors - BJT
USHTS8541100080
DescriptionBipolar Transistors - BJT 50V, .1A