参数项参数值
参数项参数值
DC Current Gain hFE Max800
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current0.1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.5 V
DC Collector/Base Gain hfe Min420
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
Unit Weight0.000282 oz
RoHS Details
SeriesBC847
Pd - Power Dissipation200 mW
BrandComchip Technology
ImageComchip Technology BC847A-G
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerComchip Technology
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT 6V, 10uA