参数项参数值
参数项参数值
DC Current Gain hFE Max800
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current0.1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.5 V
DC Collector/Base Gain hfe Min420
KRHTS8541109000
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541100901
CAHTS8541100090
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541100000
RoHS Details
SubcategoryTransistors
PackagingReel
ImageComchip Technology BC847C-G
BrandComchip Technology
Product TypeBJTs - Bipolar Transistors
SeriesBC847
ManufacturerComchip Technology
USHTS8541100080
Unit Weight0.000282 oz
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT SM SIGNAL TRANSISTOR
Pd - Power Dissipation200 mW