参数项参数值
参数项参数值
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current310 mA
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1.1 V
Rds On - Drain-Source Resistance1.6 Ohms
Transistor Type1 N-Channel Trench MOSFET
Typical Turn-Off Delay Time10 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time3 ns
CAHTS8541290000
Height1 mm
Minimum Operating Temperature- 55 C
Width1.35 mm
Maximum Operating Temperature+ 150 C
Length2.2 mm
MXHTS85412999
KRHTS8541219000
Qg - Gate Charge0.6 nC
SubcategoryMOSFETs
JPHTS8541290100
Package / CaseSOT-323-3
ProductMOSFET Small Signal
Channel ModeEnhancement
Mounting StyleSMD/SMT
CNHTS8541210000
Fall Time5 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
TARIC8541290000
ImageNexperia 2N7002PW,115
Unit Weight0.000176 oz
Factory Pack Quantity3000
Pd - Power Dissipation310 mW
Product TypeMOSFET
DescriptionMOSFET 60V 0.3A N-CHANNEL TRENCH MOSFET
BrandNexperia
Part # Aliases934064137115
Product CategoryMOSFET
ManufacturerNexperia
Vds - Drain-Source Breakdown Voltage60 V
USHTS8541210075
Number of Channels1 Channel
Rise Time4 ns
Moisture Sensitivity Level1 (Unlimited)