参数项参数值
参数项参数值
DC Current Gain hFE Max35
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current0.1 A
ConfigurationDual
Transistor PolarityNPN
MXHTS85412101
DC Collector/Base Gain hfe Min35
Width1.25 mm
Mounting StyleSMD/SMT
Height0.9 mm
Maximum Operating Temperature+ 150 C
Length2 mm
Minimum Operating Temperature- 55 C
KRHTS8541219000
Factory Pack Quantity3000
CAHTS8541210000
Package / CaseSOT-363-6
JPHTS8541210101
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.000423 oz
TARIC8541210000
Pd - Power Dissipation187 mW
RoHS Details
USHTS8541210095
Typical Resistor Ratio1
SeriesMUN5211DW1
ManufacturerON Semiconductor
Typical Input Resistor10 kOhms
BrandON Semiconductor
Product CategoryBipolar Transistors - Pre-Biased
Product TypeBJTs - Bipolar Transistors - Pre-Biased
SubcategoryTransistors