参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current0.1 A
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage0.6 V
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min200
Mounting StyleSMD/SMT
Width1.3 mm
Height0.94 mm
Length2.9 mm
Maximum Operating Temperature+ 150 C
SeriesBC848BL
Factory Pack Quantity3000
Minimum Operating Temperature- 55 C
Package / CaseSOT-23-3
PackagingCut Tape
PackagingReel
PackagingMouseReel
Unit Weight0.001376 oz
RoHS Details
Pd - Power Dissipation225 mW
BrandON Semiconductor
DescriptionBipolar Transistors - BJT 100mA 30V NPN
ImageON Semiconductor BC848BLT1G
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
ManufacturerON Semiconductor
SubcategoryTransistors
Moisture Sensitivity Level1 (Unlimited)