参数项参数值
参数项参数值
DC Current Gain hFE Max63 at 150 mA, 2 V
Gain Bandwidth Product fT180 Mhz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current1 A
ConfigurationSingle
Collector- Emitter Voltage VCEO Max80 V
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO5 V
Height1.6 mm
Width2.6 mm
Length4.6 mm
QualificationAEC-Q101
Mounting StyleSMD/SMT
MXHTS85412999
CNHTS8541290000
BrandNexperia
KRHTS8541299000
Unit Weight0.004603 oz
SubcategoryTransistors
Package / CaseSOT-89-3
CAHTS8541290000
JPHTS8541290100
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT NPN 80V 1A
Factory Pack Quantity1000
ImageNexperia BCX56-10,115
TARIC8541290000
ManufacturerNexperia
Product CategoryBipolar Transistors - BJT
RoHS Details
Pd - Power Dissipation1250 mW
Part # Aliases933663090115
USHTS8541290075
Moisture Sensitivity Level1 (Unlimited)