参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min0.4 S
Id - Continuous Drain Current760 mA
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage- 1.2 V
TechnologySi
Rds On - Drain-Source Resistance1 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time29 ns
Width0.8 mm
Height0.75 mm
Vgs - Gate-Source Voltage- 6 V, + 6 V
KRHTS8541299000
Typical Turn-On Delay Time8 ns
Length1.6 mm
Package / CaseSC-75-3
SeriesNTA4151P
MXHTS85412101
Product CategoryMOSFET
ManufacturerON Semiconductor
Unit Weight0.000097 oz
Qg - Gate Charge2.1 nC
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
ProductMOSFET Small Signal
JPHTS8541210101
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
BrandON Semiconductor
RoHS Details
CNHTS8541210000
TARIC8541210000
Product TypeMOSFET
ImageON Semiconductor NTA4151PT1G
SubcategoryMOSFETs
Factory Pack Quantity3000
Fall Time20.4 ns
USHTS8541290095
Pd - Power Dissipation301 mW
TypeMOSFET
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time8.2 ns
Moisture Sensitivity Level1 (Unlimited)