MMBT2907AWT1G

厂牌：安森美(onsemi)

包装：--

类目：元器件 > 分立器件 > 双极晶体管

编号：B000052385834

描述：TRANS GP SS PNP 60V SOT323Bipolar Transistors - BJT 600mA 60V PNP

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商品参数

参数项参数值

Gain Bandwidth Product fT200 MHz

Collector- Base Voltage VCBO4 V

ConfigurationSingle

Maximum DC Collector Current0.6 A

Collector- Emitter Voltage VCEO Max- 60 V

Continuous Collector Current- 0.6 A

Transistor PolarityPNP

TechnologySi

Emitter- Base Voltage VEBO5 V

MXHTS85412101

Height0.85 mm

KRHTS8541219000

Collector-Emitter Saturation Voltage- 1.6 V

DC Collector/Base Gain hfe Min75

Factory Pack Quantity3000

Length2.1 mm

Width1.24 mm

PackagingCut Tape

PackagingMouseReel

PackagingReel

JPHTS8541210101

Minimum Operating Temperature- 55 C

Package / CaseSC-70-3

CAHTS8541210000

CNHTS8541210000

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 150 C

ImageON Semiconductor MMBT2907AWT1G

BrandON Semiconductor

Product TypeBJTs - Bipolar Transistors

TARIC8541210000

DescriptionBipolar Transistors - BJT 600mA 60V PNP

RoHS Details

Product CategoryBipolar Transistors - BJT

SeriesMMBT2907AW

ManufacturerON Semiconductor

SubcategoryTransistors

Unit Weight0.000219 oz

USHTS8541210095

Pd - Power Dissipation150 mW

Moisture Sensitivity Level1 (Unlimited)