参数项参数值
参数项参数值
DC Current Gain hFE Max80
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
ConfigurationDual
Transistor PolarityNPN
DC Collector/Base Gain hfe Min80
Width1.25 mm
Height0.9 mm
Length2 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-363(PB-Free)-6
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.000988 oz
TARIC8541210000
ImageON Semiconductor MUN5214DW1T1G
Pd - Power Dissipation256 mW
RoHS Details
Factory Pack Quantity3000
SeriesMUN5214DW1
ManufacturerON Semiconductor
Typical Input Resistor10 kOhms
BrandON Semiconductor
Product CategoryBipolar Transistors - Pre-Biased
Product TypeBJTs - Bipolar Transistors - Pre-Biased
SubcategoryTransistors
DescriptionBipolar Transistors - Pre-Biased SS BR XSTR NPN 50V
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)