参数项参数值
参数项参数值
Gain Bandwidth Product fT50 MHz
Collector- Base Voltage VCBO- 100 V
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max- 80 V
Continuous Collector Current1.5 A
ConfigurationSingle
Transistor PolarityPNP
TechnologySi
Emitter- Base Voltage VEBO5 V
Width3.5 mm
Height1.57 mm
Collector-Emitter Saturation Voltage- 0.5 V
DC Collector/Base Gain hfe Min25
JPHTS8541290100
CAHTS8541290000
MXHTS85412999
Length6.5 mm
KRHTS8541299000
ImageON Semiconductor BCP53T1G
SubcategoryTransistors
PackagingCut Tape
PackagingMouseReel
PackagingReel
Mounting StyleSMD/SMT
Product CategoryBipolar Transistors - BJT
Package / CaseSOT-223-4
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
RoHS Details
TARIC8541290000
Product TypeBJTs - Bipolar Transistors
BrandON Semiconductor
Factory Pack Quantity1000
ManufacturerON Semiconductor
Unit Weight0.006349 oz
SeriesBCP53
USHTS8541290075
DescriptionBipolar Transistors - BJT 1.5A 100V PNP
Pd - Power Dissipation1.5 W
Moisture Sensitivity Level1 (Unlimited)