MMBT5551LT1G

厂牌：安森美(onsemi)

包装：--

类目：元器件 > 分立器件 > 双极晶体管

编号：B000052386103

描述：Small Signal Bipolar Transistor, 0.06A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236ABBipolar Transistors - BJT 600mA 160V NPN

商品参数

参数项参数值

PackagingTape & Reel (TR)

Package / CaseTO-236-3, SC-59, SOT-23-3

Mounting TypeSurface Mount

Transistor TypeNPN

Operating Temperature-55°C ~ 150°C (TJ)

Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA

Current - Collector Cutoff (Max)100nA

DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V

Frequency - Transition-

Supplier Device PackageSOT-23-3 (TO-236)

Part StatusActive

Current - Collector (Ic) (Max)600 mA

Voltage - Collector Emitter Breakdown (Max)160 V

Power - Max225 mW

Moisture Sensitivity Level1 (Unlimited)