参数项参数值
参数项参数值
DC Current Gain hFE Max125 at 2 mA, 5 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max65 V
TechnologySi
ConfigurationSingle
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min125
QualificationAEC-Q101
Width1.35 mm
Length2.2 mm
Height1 mm
JPHTS8541210101
MXHTS85412101
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandNexperia
KRHTS8541219000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Package / CaseSOT-323-3
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
TARIC8541210000
Unit Weight0.000176 oz
RoHS Details
Pd - Power Dissipation200 mW
DescriptionBipolar Transistors - BJT TRANS GP TAPE-7
Part # Aliases934021750115
ImageNexperia BC856W,115
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
ManufacturerNexperia
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
USHTS8541210075