参数项参数值
参数项参数值
Length2.2 mm
Gain Bandwidth Product fT100 MHz
ConfigurationDual
Height1 mm
Collector- Base Voltage VCBO50 V
QualificationAEC-Q101
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max40 V
Transistor PolarityNPN, PNP
TechnologySi
Emitter- Base Voltage VEBO5 V
CAHTS8541210000
Factory Pack Quantity3000
JPHTS8541210101
Package / CaseTSSOP-6
BrandNexperia
PackagingReel
PackagingCut Tape
PackagingMouseReel
KRHTS8541219000
ImageNexperia PUMZ1,115
DC Collector/Base Gain hfe Min120
SubcategoryTransistors
DescriptionBipolar Transistors - BJT NPN/PNP 40V 100mA
TARIC8541210000
Minimum Operating Temperature- 65 C
ManufacturerNexperia
Maximum Operating Temperature+ 150 C
USHTS8541210075
Mounting StyleSMD/SMT
RoHS Details
Width1.35 mm
MXHTS85412101
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
Unit Weight0.000212 oz
CNHTS8541210000
Part # Aliases934034220115
Pd - Power Dissipation200 mW