参数项参数值
参数项参数值
DC Current Gain hFE Max50 at 25 mA, 20 V
Gain Bandwidth Product fT60 MHz
Collector- Base Voltage VCBO300 V
Maximum DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max300 V
Continuous Collector Current50 mA
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min50
QualificationAEC-Q101
Width1.4 mm
Length3 mm
Height1 mm
JPHTS8541210101
Maximum Operating Temperature+ 150 C
MXHTS85412101
BrandNexperia
KRHTS8541219000
Mounting StyleSMD/SMT
Minimum Operating Temperature- 65 C
Package / CaseSOT-23-3
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
RoHS Details
Unit Weight0.000282 oz
TARIC8541210000
Pd - Power Dissipation250 mW
USHTS8541210095
DescriptionBipolar Transistors - BJT TRANS HV TAPE-7
ImageNexperia BF820,215
Part # Aliases933665120215
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerNexperia