参数项参数值
参数项参数值
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current0.3 A
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO7 V
Collector-Emitter Saturation Voltage0.14 V
DC Collector/Base Gain hfe Min400
JPHTS8541290100
MXHTS85412999
KRHTS8541299000
PackagingReel
SubcategoryTransistors
Mounting StyleThrough Hole
Product CategoryBipolar Transistors - BJT
CAHTS8541290000
CNHTS8541210000
RoHS Details
TARIC8541290000
BrandToshiba
Series2SC5712
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity1000
ManufacturerToshiba
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN 100V VCBO 50V VCEO 3A IC
Pd - Power Dissipation1 W