参数项参数值
参数项参数值
DC Current Gain hFE Max250
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO180 V
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max160 V
Continuous Collector Current0.6 A
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage0.2 V
Emitter- Base Voltage VEBO6 V
MXHTS85412101
DC Collector/Base Gain hfe Min80
Width1.4 mm
Mounting StyleSMD/SMT
Height1 mm
Maximum Operating Temperature+ 150 C
Length3.05 mm
Minimum Operating Temperature- 55 C
KRHTS8541219000
Factory Pack Quantity3000
CAHTS8541210000
Package / CaseSOT-23-3
JPHTS8541210101
CNHTS8541210000
PackagingCut Tape
PackagingReel
PackagingMouseReel
Unit Weight0.001164 oz
TARIC8541210000
ImageDiodes Incorporated MMBT5551-7-F
Pd - Power Dissipation300 mW
RoHS Details
USHTS8541210075
ManufacturerDiodes Incorporated
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
DescriptionBipolar Transistors - BJT SS NPN 300mW
Moisture Sensitivity Level1 (Unlimited)