参数项参数值
参数项参数值
TechnologySi
ConfigurationDual
Id - Continuous Drain Current1030 mA, 700 mA
Vgs th - Gate-Source Threshold Voltage500 mV
Transistor PolarityN-Channel, P-Channel
Rds On - Drain-Source Resistance480 mOhms, 970 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time13.74 ns, 20.2 ns
Vgs - Gate-Source Voltage- 5 V, + 5 V
MXHTS85412999
Typical Turn-On Delay Time4.06 ns, 8.5 ns
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Qg - Gate Charge0.07 nC, 0.85 nC
KRHTS8541299000
Factory Pack Quantity3000
CAHTS8541290000
Package / CaseSOT-563-6
Channel ModeEnhancement
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CNHTS8541210000
Fall Time10.54 ns, 19.2 ns
PackagingReel
PackagingCut Tape
PackagingMouseReel
Unit Weight0.001023 oz
ImageDiodes Incorporated DMC2400UV-7
TARIC8541290000
Pd - Power Dissipation1 W
SeriesDMC2400
RoHS Details
USHTS8541290095
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Product CategoryMOSFET
Vds - Drain-Source Breakdown Voltage20 V
Product TypeMOSFET
Number of Channels2 Channel
DescriptionMOSFET 20V N P Ch 20VDSS 0.45W Low RDSon
SubcategoryMOSFETs
Rise Time7.28 ns, 4.3 ns