参数项参数值
参数项参数值
Gain Bandwidth Product fT50 MHz
ConfigurationSingle
Collector- Base Voltage VCBO300 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max300 V
Continuous Collector Current0.5 A
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO6 V
Height1 mm
MXHTS85412101
KRHTS8541219000
Collector-Emitter Saturation Voltage0.5 V
DC Collector/Base Gain hfe Min40
Length3.05 mm
Factory Pack Quantity3000
Width1.4 mm
PackagingCut Tape
PackagingMouseReel
JPHTS8541210101
Minimum Operating Temperature- 55 C
Package / CaseSOT-23-3
CNHTS8541210000
CAHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
ImageDiodes Incorporated MMBTA42-7-F
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
TARIC8541210000
DescriptionBipolar Transistors - BJT 300V 300mW
SeriesMMBTA42
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SubcategoryTransistors
USHTS8541210095
Unit Weight0.000282 oz
Pd - Power Dissipation300 mW
Moisture Sensitivity Level1 (Unlimited)