参数项参数值
参数项参数值
TechnologySi
Id - Continuous Drain Current540 mA
ConfigurationSingle
Transistor PolarityN-Channel
Rds On - Drain-Source Resistance550 mOhms
Transistor Type1 N-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Width1.3 mm
Length2.15 mm
Height1 mm
PackagingCut Tape
PackagingMouseReel
PackagingReel
MXHTS85412101
ImageDiodes Incorporated DMN2004WK-7
KRHTS8541219000
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Package / CaseSOT-323-3
CAHTS8541210000
Minimum Operating Temperature- 65 C
CNHTS8541210000
ProductMOSFET Small Signal
TARIC8541210000
Unit Weight0.000176 oz
RoHS Details
SeriesDMN2004
Pd - Power Dissipation200 mW
DescriptionMOSFET N-Channel
BrandDiodes Incorporated
Product TypeMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage20 V
ManufacturerDiodes Incorporated
Product CategoryMOSFET
Number of Channels1 Channel
USHTS8541210095