参数项参数值
参数项参数值
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current4.2 A
Vgs th - Gate-Source Threshold Voltage500 mV
Transistor PolarityP-Channel
Rds On - Drain-Source Resistance60 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time53.8 ns
Vgs - Gate-Source Voltage- 8 V, + 8 V
MXHTS85412101
Typical Turn-On Delay Time14 ns
Mounting StyleSMD/SMT
Width1.3 mm
Height1 mm
Length2.9 mm
Qg - Gate Charge7.6 nC
SeriesDMP2305
KRHTS8541219000
Package / CaseSOT-23-3
CAHTS8541210000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
CNHTS8541290000
Maximum Operating Temperature+ 150 C
JPHTS8541210101
ProductMOSFET Small Signal
Fall Time23.2 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.000282 oz
TARIC8541210000
ImageDiodes Incorporated DMP2305U-7
Pd - Power Dissipation1.4 W
Factory Pack Quantity3000
RoHS Details
DescriptionMOSFET P-CHANNEL ENHANCEMENT MODE
USHTS8541210095
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Vds - Drain-Source Breakdown Voltage20 V
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
Number of Channels1 Channel
Rise Time13 ns
Moisture Sensitivity Level1 (Unlimited)