参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT300 MHz
ConfigurationSingle
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current0.2 A
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO6 V
Height0.75 mm
MXHTS85412101
KRHTS8541219000
Collector-Emitter Saturation Voltage0.3 V
Length1.6 mm
Factory Pack Quantity3000
Width0.8 mm
PackagingReel
PackagingCut Tape
PackagingMouseReel
JPHTS8541210101
Minimum Operating Temperature- 55 C
CNHTS8541210000
CAHTS8541210000
Package / CaseSOT-523-3
Mounting StyleSMD/SMT
ImageDiodes Incorporated MMBT3904T-7-F
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
TARIC8541210000
DescriptionBipolar Transistors - BJT 40V 150mW
SeriesMMBT3904T
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SubcategoryTransistors
USHTS8541210075
Unit Weight0.000071 oz
Pd - Power Dissipation150 mW
Moisture Sensitivity Level1 (Unlimited)