参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current0.2 A
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage0.3 V
Emitter- Base Voltage VEBO6 V
MXHTS85412101
Width1.4 mm
Mounting StyleSMD/SMT
Height1 mm
Maximum Operating Temperature+ 150 C
Length3.05 mm
Minimum Operating Temperature- 55 C
KRHTS8541219000
Factory Pack Quantity3000
CAHTS8541210000
Package / CaseSOT-23-3
JPHTS8541210101
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.000282 oz
TARIC8541210000
ImageDiodes Incorporated MMBT3904-7-F
Pd - Power Dissipation310 mW
RoHS Details
USHTS8541210095
SeriesMMBT3904
ManufacturerDiodes Incorporated
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
DescriptionBipolar Transistors - BJT 40V NPN SS Trans 60Vceo 6Vebo 200mA
Moisture Sensitivity Level1 (Unlimited)