参数项参数值
参数项参数值
tariffCode85412900
Power Dissipation P Channel1.3W
rohsCompliantYES
Transistor PolarityN Channel
Power Dissipation N Channel1.3W
hazardousfalse
rohsPhthalatesCompliantYES
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max3V
No. of Pins8Pins
usEccnEAR99
Drain Source On State Resistance P Channel0.03ohm
Automotive Qualification Standard-
Drain Source Voltage Vds60V
MSLMSL 1 - Unlimited
Drain Source On State Resistance N Channel0.03ohm
Product Range-
euEccnNLR
Channel TypeN Channel
Qualification-
On Resistance Rds(on)0.03ohm
Power Dissipation Pd1.3W
productTraceabilityNo
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel5A
Continuous Drain Current Id5A
Continuous Drain Current Id P Channel5A
Operating Temperature Max150°C
Transistor MountingSurface Mount
Drain Source Voltage Vds N Channel60V
SVHCNo SVHC (17-Jan-2023)
Moisture Sensitivity Level1 (Unlimited)